SI2387DS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2387DS-T1-GE3 is a SI2387DS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 164mΩ@2.1A,10V 2.5V@250uA 1PCSPChannel SOT-23-3(TO-236-3) MOSFETs ROHS. This product comes in a SOT-23-3(TO-236-3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 2.1A;3A
  • Power Dissipation (Pd): 1.3W;2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 164mΩ@2.1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 395pF@40V
  • Total Gate Charge (Qg@Vgs): 10.2nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.02 grams.

More on SI2387DS-T1-GE3

Full Specifications of SI2387DS-T1-GE3

Model NumberSI2387DS-T1-GE3
Model NameVishay Intertech SI2387DS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 164mΩ@2.1A,10V 2.5V@250uA 1PCSPChannel SOT-23-3(TO-236-3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.020 grams / 0.000705 oz
Package / CaseSOT-23-3(TO-236-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)2.1A;3A
Power Dissipation (Pd)1.3W;2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)164mΩ@2.1A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)395pF@40V
Total Gate Charge (Qg@Vgs)10.2nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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