SI2399DS-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI2399DS-T1-BE3 is a SI2399DS-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 34mΩ@5.1A,10V 1.5V@250uA 1PCSPChannel SOT-23(TO-236) MOSFETs ROHS. This product comes in a SOT-23(TO-236) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 5.1A;6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 34mΩ@5.1A,10V
  • Power Dissipation (Pd): 1.25W;2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 835pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SI2399DS-T1-BE3

Model NumberSI2399DS-T1-BE3
Model NameVishay Intertech SI2399DS-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 34mΩ@5.1A,10V 1.5V@250uA 1PCSPChannel SOT-23(TO-236) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-23(TO-236)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)5.1A;6A
Drain Source On Resistance (RDS(on)@Vgs,Id)34mΩ@5.1A,10V
Power Dissipation (Pd)1.25W;2.5W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)835pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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