SI3129DV-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI3129DV-T1-GE3 is a SI3129DV-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 82.7mΩ@3.8A,10V 2.5V@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 3.8A;5.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 82.7mΩ@3.8A,10V
  • Power Dissipation (Pd): 2W;4.2W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 805pF@40V
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI3129DV-T1-GE3

Full Specifications of SI3129DV-T1-GE3

Model NumberSI3129DV-T1-GE3
Model NameVishay Intertech SI3129DV-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 82.7mΩ@3.8A,10V 2.5V@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSOP-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)3.8A;5.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)82.7mΩ@3.8A,10V
Power Dissipation (Pd)2W;4.2W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)805pF@40V
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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