SI3430DV-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI3430DV-T1-BE3 is a SI3430DV-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 1.8A 1.14W 170mΩ@2.4A,10V 4.2V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 1.8A
  • Power Dissipation (Pd): 1.14W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 170mΩ@2.4A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.2V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 8.2nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI3430DV-T1-BE3

Full Specifications of SI3430DV-T1-BE3

Model NumberSI3430DV-T1-BE3
Model NameVishay Intertech SI3430DV-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 1.8A 1.14W 170mΩ@2.4A,10V 4.2V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSOP-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)1.8A
Power Dissipation (Pd)1.14W
Drain Source On Resistance (RDS(on)@Vgs,Id)170mΩ@2.4A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.2V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)8.2nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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