SI3437DV-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI3437DV-T1-E3 is a SI3437DV-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 1.4A 750mΩ@1.4A,10V 4V@250uA 1PCSPChannel SOT-23-6 MOSFETs ROHS. This product comes in a SOT-23-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 1.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 750mΩ@1.4A,10V
  • Power Dissipation (Pd): 2W;3.2W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 510pF@50V
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.046 grams.

More on SI3437DV-T1-E3

Full Specifications of SI3437DV-T1-E3

Model NumberSI3437DV-T1-E3
Model NameVishay Intertech SI3437DV-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description150V 1.4A 750mΩ@1.4A,10V 4V@250uA 1PCSPChannel SOT-23-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.046 grams / 0.001623 oz
Package / CaseSOT-23-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)1.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)750mΩ@1.4A,10V
Power Dissipation (Pd)2W;3.2W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)510pF@50V
Total Gate Charge (Qg@Vgs)19nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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