SI3458BDV-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI3458BDV-T1-GE3 is a SI3458BDV-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 4.1A 2W 100mΩ@10V,3.2A 3V@250uA 1PCSNChannel TSOP-6-1.5mm MOSFETs ROHS. This product comes in a TSOP-6-1.5mm package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 4.1A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@10V,3.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.024 grams.

Full Specifications of SI3458BDV-T1-GE3

Model NumberSI3458BDV-T1-GE3
Model NameVishay Intertech SI3458BDV-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 4.1A 2W 100mΩ@10V,3.2A 3V@250uA 1PCSNChannel TSOP-6-1.5mm MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.024 grams / 0.000847 oz
Package / CaseTSOP-6-1.5mm
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)4.1A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)100mΩ@10V,3.2A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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