Vishay Intertech SI3459BDV-T1-BE3 is a SI3459BDV-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 216mΩ@2.2A,10V 3V@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 2.2A;2.9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 216mΩ@2.2A,10V
- Power Dissipation (Pd): 2W;3.3W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 350pF@30V
- Total Gate Charge (Qg@Vgs): 12nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SI3459BDV-T1-BE3
Full Specifications of SI3459BDV-T1-BE3
Model Number | SI3459BDV-T1-BE3 |
Model Name | Vishay Intertech SI3459BDV-T1-BE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 60V 216mΩ@2.2A,10V 3V@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TSOP-6 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 2.2A;2.9A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 216mΩ@2.2A,10V |
Power Dissipation (Pd) | 2W;3.3W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 350pF@30V |
Total Gate Charge (Qg@Vgs) | 12nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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