SI3476DV-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI3476DV-T1-BE3 is a SI3476DV-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 93mΩ@3.5A,10V 3V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 3.5A;4.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 93mΩ@3.5A,10V
  • Power Dissipation (Pd): 2W;3.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 195pF@40V
  • Total Gate Charge (Qg@Vgs): 7.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI3476DV-T1-BE3

Full Specifications of SI3476DV-T1-BE3

Model NumberSI3476DV-T1-BE3
Model NameVishay Intertech SI3476DV-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 93mΩ@3.5A,10V 3V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSOP-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)3.5A;4.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)93mΩ@3.5A,10V
Power Dissipation (Pd)2W;3.6W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)195pF@40V
Total Gate Charge (Qg@Vgs)7.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI3476DV-T1-BE3 With Other 200 Models

Related Models - SI3476DV-T1-BE3 Alternative

Scroll to Top