SI3483DDV-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI3483DDV-T1-GE3 is a SI3483DDV-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 31.2mΩ@5A,10V 2.2V@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6.4A;8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31.2mΩ@5A,10V
  • Power Dissipation (Pd): 2W;3W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 580pF@15V
  • Total Gate Charge (Qg@Vgs): 14.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.04 grams.

More on SI3483DDV-T1-GE3

Full Specifications of SI3483DDV-T1-GE3

Model NumberSI3483DDV-T1-GE3
Model NameVishay Intertech SI3483DDV-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 31.2mΩ@5A,10V 2.2V@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.040 grams / 0.001411 oz
Package / CaseTSOP-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6.4A;8A
Drain Source On Resistance (RDS(on)@Vgs,Id)31.2mΩ@5A,10V
Power Dissipation (Pd)2W;3W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)580pF@15V
Total Gate Charge (Qg@Vgs)14.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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