SI3499DV-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI3499DV-T1-BE3 is a SI3499DV-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 5.3A 23mΩ@7A,4.5V 1.1W 750mV@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 5.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@7A,4.5V
  • Power Dissipation (Pd): 1.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 750mV@250uA
  • Type: 1PCSPChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SI3499DV-T1-BE3

Model NumberSI3499DV-T1-BE3
Model NameVishay Intertech SI3499DV-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description8V 5.3A 23mΩ@7A,4.5V 1.1W 750mV@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSOP-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)8V
Continuous Drain Current (Id)5.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)23mΩ@7A,4.5V
Power Dissipation (Pd)1.1W
Gate Threshold Voltage (Vgs(th)@Id)750mV@250uA
Type1PCSPChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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