Vishay Intertech SI3499DV-T1-BE3 is a SI3499DV-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 5.3A 23mΩ@7A,4.5V 1.1W 750mV@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 8V
- Continuous Drain Current (Id): 5.3A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@7A,4.5V
- Power Dissipation (Pd): 1.1W
- Gate Threshold Voltage (Vgs(th)@Id): 750mV@250uA
- Type: 1PCSPChannel
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SI3499DV-T1-BE3
Full Specifications of SI3499DV-T1-BE3
Model Number | SI3499DV-T1-BE3 |
Model Name | Vishay Intertech SI3499DV-T1-BE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 8V 5.3A 23mΩ@7A,4.5V 1.1W 750mV@250uA 1PCSPChannel TSOP-6 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TSOP-6 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 8V |
Continuous Drain Current (Id) | 5.3A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 23mΩ@7A,4.5V |
Power Dissipation (Pd) | 1.1W |
Gate Threshold Voltage (Vgs(th)@Id) | 750mV@250uA |
Type | 1PCSPChannel |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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