SI3993DV-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI3993DV-T1-E3 is a SI3993DV-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 1.8A 830mW 133mΩ@10V,2.2A 3V@250uA 2 P-Channel TSOP-6-1.5mm MOSFETs ROHS. This product comes in a TSOP-6-1.5mm package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 1.8A
  • Power Dissipation (Pd): 830mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 133mΩ@10V,2.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 P-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.07 grams.

More on SI3993DV-T1-E3

Full Specifications of SI3993DV-T1-E3

Model NumberSI3993DV-T1-E3
Model NameVishay Intertech SI3993DV-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 1.8A 830mW 133mΩ@10V,2.2A 3V@250uA 2 P-Channel TSOP-6-1.5mm MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.070 grams / 0.002469 oz
Package / CaseTSOP-6-1.5mm
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)1.8A
Power Dissipation (Pd)830mW
Drain Source On Resistance (RDS(on)@Vgs,Id)133mΩ@10V,2.2A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 P-Channel

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