SI4058DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4058DY-T1-GE3 is a SI4058DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 10.3A 26mΩ@10A,10V 5.6W 2.8V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 10.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@10A,10V
  • Power Dissipation (Pd): 5.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 690pF@50V
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.267 grams.

More on SI4058DY-T1-GE3

Full Specifications of SI4058DY-T1-GE3

Model NumberSI4058DY-T1-GE3
Model NameVishay Intertech SI4058DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 10.3A 26mΩ@10A,10V 5.6W 2.8V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.267 grams / 0.009418 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)10.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)26mΩ@10A,10V
Power Dissipation (Pd)5.6W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)690pF@50V
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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