SI4062DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4062DY-T1-GE3 is a SI4062DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 32.1A 7.8W 4.2mΩ@10V,20A 2.6V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 32.1A
  • Power Dissipation (Pd): 7.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.6V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.175nF@30V
  • Total Gate Charge (Qg@Vgs): 60nC@10V

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

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Full Specifications of SI4062DY-T1-GE3

Model NumberSI4062DY-T1-GE3
Model NameVishay Intertech SI4062DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 32.1A 7.8W 4.2mΩ@10V,20A 2.6V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)32.1A
Power Dissipation (Pd)7.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)2.6V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.175nF@30V
Total Gate Charge (Qg@Vgs)60nC@10V

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