SI4100DY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4100DY-T1-E3 is a SI4100DY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 6.8A 63mΩ@4.4A,10V 4.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 6.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 63mΩ@4.4A,10V
  • Power Dissipation (Pd): 2.5W;6W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 600pF@50V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI4100DY-T1-E3

Full Specifications of SI4100DY-T1-E3

Model NumberSI4100DY-T1-E3
Model NameVishay Intertech SI4100DY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description100V 6.8A 63mΩ@4.4A,10V 4.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)6.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)63mΩ@4.4A,10V
Power Dissipation (Pd)2.5W;6W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)600pF@50V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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