Vishay Intertech SI4101DY-T1-GE3 is a SI4101DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 25.7A 6mΩ@15A,10V 6W 2.5V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 25.7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6mΩ@15A,10V
- Power Dissipation (Pd): 6W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 8.19nF@15V
- Total Gate Charge (Qg@Vgs): 203nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.122 grams.
More on SI4101DY-T1-GE3
Full Specifications of SI4101DY-T1-GE3
Model Number | SI4101DY-T1-GE3 |
Model Name | Vishay Intertech SI4101DY-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 30V 25.7A 6mΩ@15A,10V 6W 2.5V@250uA 1PCSPChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.122 grams / 0.004303 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 25.7A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6mΩ@15A,10V |
Power Dissipation (Pd) | 6W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 8.19nF@15V |
Total Gate Charge (Qg@Vgs) | 203nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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