Vishay Intertech SI4134DY-T1-E3 is a SI4134DY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 14A 14mΩ@10A,10V 2.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 14A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10A,10V
- Power Dissipation (Pd): 2.5W;5W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 846pF@15V
- Total Gate Charge (Qg@Vgs): 23nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.248 grams.
More on SI4134DY-T1-E3
Full Specifications of SI4134DY-T1-E3
Model Number | SI4134DY-T1-E3 |
Model Name | Vishay Intertech SI4134DY-T1-E3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 30V 14A 14mΩ@10A,10V 2.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.248 grams / 0.008748 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 14A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 14mΩ@10A,10V |
Power Dissipation (Pd) | 2.5W;5W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 846pF@15V |
Total Gate Charge (Qg@Vgs) | 23nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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