SI4136DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4136DY-T1-GE3 is a SI4136DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 46A 2mΩ@10V,15A 2.2V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 46A
  • Power Dissipation (Pd): 3.5W;7.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@10V,15A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.56nF@10V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SI4136DY-T1-GE3

Full Specifications of SI4136DY-T1-GE3

Model NumberSI4136DY-T1-GE3
Model NameVishay Intertech SI4136DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 46A 2mΩ@10V,15A 2.2V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)46A
Power Dissipation (Pd)3.5W;7.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)2mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.56nF@10V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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