SI4162DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4162DY-T1-GE3 is a SI4162DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 19.3A 7.9mΩ@20A,10V 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 19.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.9mΩ@20A,10V
  • Power Dissipation (Pd): 2.5W;5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.155nF@15V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.261 grams.

More on SI4162DY-T1-GE3

Full Specifications of SI4162DY-T1-GE3

Model NumberSI4162DY-T1-GE3
Model NameVishay Intertech SI4162DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 19.3A 7.9mΩ@20A,10V 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.261 grams / 0.009207 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)19.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.9mΩ@20A,10V
Power Dissipation (Pd)2.5W;5W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.155nF@15V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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