SI4166DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4166DY-T1-GE3 is a SI4166DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 30.5A 3.9mΩ@15A,10V 2.4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30.5A
  • Power Dissipation (Pd): 3W;6.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@15A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.73nF@15V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.264 grams.

More on SI4166DY-T1-GE3

Full Specifications of SI4166DY-T1-GE3

Model NumberSI4166DY-T1-GE3
Model NameVishay Intertech SI4166DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 30.5A 3.9mΩ@15A,10V 2.4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.264 grams / 0.009312 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)30.5A
Power Dissipation (Pd)3W;6.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.9mΩ@15A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.73nF@15V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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