SI4190ADY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4190ADY-T1-GE3 is a SI4190ADY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 18.4A 8.8mΩ@10V,15A 2.8V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 18.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.8mΩ@10V,15A
  • Power Dissipation (Pd): 3W;6W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.97nF@50V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SI4190ADY-T1-GE3

Full Specifications of SI4190ADY-T1-GE3

Model NumberSI4190ADY-T1-GE3
Model NameVishay Intertech SI4190ADY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 18.4A 8.8mΩ@10V,15A 2.8V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)18.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.8mΩ@10V,15A
Power Dissipation (Pd)3W;6W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.97nF@50V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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