SI4228DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4228DY-T1-GE3 is a SI4228DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 25V 8A 18mΩ@7A,10V 3.1W 1.4V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@7A,10V
  • Power Dissipation (Pd): 3.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): [email protected]
  • Total Gate Charge (Qg@Vgs): 25nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.248 grams.

More on SI4228DY-T1-GE3

Full Specifications of SI4228DY-T1-GE3

Model NumberSI4228DY-T1-GE3
Model NameVishay Intertech SI4228DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description25V 8A 18mΩ@7A,10V 3.1W 1.4V@250uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.248 grams / 0.008748 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)18mΩ@7A,10V
Power Dissipation (Pd)3.1W
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)[email protected]
Total Gate Charge (Qg@Vgs)25nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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