SI4386DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4386DY-T1-GE3 is a SI4386DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 11A 1.47W 7mΩ@10V,16A 2.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 11A
• Power Dissipation (Pd): 1.47W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,16A
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 1PCSNChannel
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.