SI4423DY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4423DY-T1-E3 is a SI4423DY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 10A 7.5mΩ@4.5V,14A 1.5W 900mV@600uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 10A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@4.5V,14A
  • Power Dissipation (Pd): 1.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@600uA
  • Type: 1PCSPChannel
  • Total Gate Charge (Qg@Vgs): 175nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

Full Specifications of SI4423DY-T1-E3

Model NumberSI4423DY-T1-E3
Model NameVishay Intertech SI4423DY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description20V 10A 7.5mΩ@4.5V,14A 1.5W 900mV@600uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)10A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@4.5V,14A
Power Dissipation (Pd)1.5W
Gate Threshold Voltage (Vgs(th)@Id)900mV@600uA
Type1PCSPChannel
Total Gate Charge (Qg@Vgs)175nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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