SI4455DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4455DY-T1-GE3 is a SI4455DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 2A 295mΩ@10V,4A 5.9W 4V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 295mΩ@10V,4A
  • Power Dissipation (Pd): 5.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.19nF@50V
  • Total Gate Charge (Qg@Vgs): 42nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.252 grams.

More on SI4455DY-T1-GE3

Full Specifications of SI4455DY-T1-GE3

Model NumberSI4455DY-T1-GE3
Model NameVishay Intertech SI4455DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 2A 295mΩ@10V,4A 5.9W 4V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.252 grams / 0.008889 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)2A
Drain Source On Resistance (RDS(on)@Vgs,Id)295mΩ@10V,4A
Power Dissipation (Pd)5.9W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.19nF@50V
Total Gate Charge (Qg@Vgs)42nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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