SI4463CDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4463CDY-T1-GE3 is a SI4463CDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 8mΩ@10V,13A 1.4V@250uA 1PCSPChannel SOIC-8-150mil MOSFETs ROHS. This product comes in a SOIC-8-150mil package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 13.6A;49A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,13A
  • Power Dissipation (Pd): 2.7W;5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.25nF@15V
  • Total Gate Charge (Qg@Vgs): 162nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

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Full Specifications of SI4463CDY-T1-GE3

Model NumberSI4463CDY-T1-GE3
Model NameVishay Intertech SI4463CDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 8mΩ@10V,13A 1.4V@250uA 1PCSPChannel SOIC-8-150mil MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8-150mil
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)13.6A;49A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@10V,13A
Power Dissipation (Pd)2.7W;5W
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.25nF@15V
Total Gate Charge (Qg@Vgs)162nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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