Vishay Intertech SI4465ADY-T1-GE3 is a SI4465ADY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 9mΩ@4.5V,14A 1V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 8V
- Continuous Drain Current (Id): 13.7A;20A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@4.5V,14A
- Power Dissipation (Pd): 3W;6.5W
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1PCSPChannel
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.
More on SI4465ADY-T1-GE3
Full Specifications of SI4465ADY-T1-GE3
Model Number | SI4465ADY-T1-GE3 |
Model Name | Vishay Intertech SI4465ADY-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 8V 9mΩ@4.5V,14A 1V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.245 grams / 0.008642 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 8V |
Continuous Drain Current (Id) | 13.7A;20A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 9mΩ@4.5V,14A |
Power Dissipation (Pd) | 3W;6.5W |
Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
Type | 1PCSPChannel |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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