SI4477DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4477DY-T1-GE3 is a SI4477DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 26.6A 6.2mΩ@4.5V,18A 1.5V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 26.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.2mΩ@4.5V,18A
  • Power Dissipation (Pd): 3W;6.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.6nF@10V
  • Total Gate Charge (Qg@Vgs): 190nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SI4477DY-T1-GE3

Full Specifications of SI4477DY-T1-GE3

Model NumberSI4477DY-T1-GE3
Model NameVishay Intertech SI4477DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 26.6A 6.2mΩ@4.5V,18A 1.5V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)26.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.2mΩ@4.5V,18A
Power Dissipation (Pd)3W;6.6W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.6nF@10V
Total Gate Charge (Qg@Vgs)190nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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