Vishay Intertech SI4490DY-T1-E3 is a SI4490DY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 2.85A 1.56W 80mΩ@10V,4A 2V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 2.85A
- Power Dissipation (Pd): 1.56W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@10V,4A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Total Gate Charge (Qg@Vgs): 42nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.122 grams.
More on SI4490DY-T1-E3
Full Specifications of SI4490DY-T1-E3
Model Number | SI4490DY-T1-E3 |
Model Name | Vishay Intertech SI4490DY-T1-E3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 200V 2.85A 1.56W 80mΩ@10V,4A 2V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.122 grams / 0.004303 oz |
Package / Case | SOP-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 200V |
Continuous Drain Current (Id) | 2.85A |
Power Dissipation (Pd) | 1.56W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@10V,4A |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Type | 1PCSNChannel |
Total Gate Charge (Qg@Vgs) | 42nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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