SI4501BDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4501BDY-T1-GE3 is a SI4501BDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 17mΩ@10A,10V 2V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V;8V
  • Configuration: Common Drain
  • Continuous Drain Current (Id): 12A;8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17mΩ@10A,10V
  • Power Dissipation (Pd): 4.5W;3.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 805pF@15V
  • Total Gate Charge (Qg@Vgs): 25nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.248 grams.

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Full Specifications of SI4501BDY-T1-GE3

Model NumberSI4501BDY-T1-GE3
Model NameVishay Intertech SI4501BDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description17mΩ@10A,10V 2V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.248 grams / 0.008748 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V;8V
ConfigurationCommon Drain
Continuous Drain Current (Id)12A;8A
Drain Source On Resistance (RDS(on)@Vgs,Id)17mΩ@10A,10V
Power Dissipation (Pd)4.5W;3.1W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)805pF@15V
Total Gate Charge (Qg@Vgs)25nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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