SI4559ADY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4559ADY-T1-E3 is a SI4559ADY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 58mΩ@4.3A,10V 3V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 5.3A;3.9A
  • Power Dissipation (Pd): 3.1W;3.4W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 58mΩ@4.3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 665pF@15V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.

More on SI4559ADY-T1-E3

Full Specifications of SI4559ADY-T1-E3

Model NumberSI4559ADY-T1-E3
Model NameVishay Intertech SI4559ADY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description60V 58mΩ@4.3A,10V 3V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.110 grams / 0.00388 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)5.3A;3.9A
Power Dissipation (Pd)3.1W;3.4W
Drain Source On Resistance (RDS(on)@Vgs,Id)58mΩ@4.3A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)665pF@15V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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