SI4590DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4590DY-T1-GE3 is a SI4590DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 57mΩ@2A,10V 2.5V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3.4A;2.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 57mΩ@2A,10V
  • Power Dissipation (Pd): 2.4W;3.4W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 360pF@50V
  • Total Gate Charge (Qg@Vgs): 11.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.

More on SI4590DY-T1-GE3

Full Specifications of SI4590DY-T1-GE3

Model NumberSI4590DY-T1-GE3
Model NameVishay Intertech SI4590DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 57mΩ@2A,10V 2.5V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.120 grams / 0.004233 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)3.4A;2.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)57mΩ@2A,10V
Power Dissipation (Pd)2.4W;3.4W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)360pF@50V
Total Gate Charge (Qg@Vgs)11.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI4590DY-T1-GE3 With Other 200 Models

Related Models - SI4590DY-T1-GE3 Alternative

Scroll to Top