SI4599DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4599DY-T1-GE3 is a SI4599DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 35.5mΩ@5A,10V 3V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 6.8A;5.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 35.5mΩ@5A,10V
  • Power Dissipation (Pd): 3W;3.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 640pF@20V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SI4599DY-T1-GE3

Full Specifications of SI4599DY-T1-GE3

Model NumberSI4599DY-T1-GE3
Model NameVishay Intertech SI4599DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 35.5mΩ@5A,10V 3V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)6.8A;5.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)35.5mΩ@5A,10V
Power Dissipation (Pd)3W;3.1W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)640pF@20V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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