SI4666DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4666DY-T1-GE3 is a SI4666DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 25V 16.5A 10mΩ@10V,10A 5W 1.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 16.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,10A
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SI4666DY-T1-GE3

Full Specifications of SI4666DY-T1-GE3

Model NumberSI4666DY-T1-GE3
Model NameVishay Intertech SI4666DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description25V 16.5A 10mΩ@10V,10A 5W 1.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)16.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V,10A
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel

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