SI4686DY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4686DY-T1-E3 is a SI4686DY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 18.2A 9.5mΩ@13.8A,10V 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 18.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.5mΩ@13.8A,10V
  • Power Dissipation (Pd): 3W;5.2W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.22nF@15V
  • Total Gate Charge (Qg@Vgs): 26nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI4686DY-T1-E3

Full Specifications of SI4686DY-T1-E3

Model NumberSI4686DY-T1-E3
Model NameVishay Intertech SI4686DY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 18.2A 9.5mΩ@13.8A,10V 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)18.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.5mΩ@13.8A,10V
Power Dissipation (Pd)3W;5.2W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.22nF@15V
Total Gate Charge (Qg@Vgs)26nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI4686DY-T1-E3 With Other 200 Models

Related Models - SI4686DY-T1-E3 Alternative

Scroll to Top