SI4776DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4776DY-T1-GE3 is a SI4776DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 11.9A 16mΩ@10V,10A 4.1W 2.3V@1mA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 11.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@10V,10A
  • Power Dissipation (Pd): 4.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.3V@1mA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SI4776DY-T1-GE3

Full Specifications of SI4776DY-T1-GE3

Model NumberSI4776DY-T1-GE3
Model NameVishay Intertech SI4776DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 11.9A 16mΩ@10V,10A 4.1W 2.3V@1mA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)16mΩ@10V,10A
Power Dissipation (Pd)4.1W
Gate Threshold Voltage (Vgs(th)@Id)2.3V@1mA
Type1PCSNChannel

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