SI4800BDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4800BDY-T1-GE3 is a SI4800BDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 6.5A 18.5mΩ@10V,9A 1.3W 1.8V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18.5mΩ@10V,9A
  • Power Dissipation (Pd): 1.3W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 13nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

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Full Specifications of SI4800BDY-T1-GE3

Model NumberSI4800BDY-T1-GE3
Model NameVishay Intertech SI4800BDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 6.5A 18.5mΩ@10V,9A 1.3W 1.8V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)18.5mΩ@10V,9A
Power Dissipation (Pd)1.3W
Gate Threshold Voltage (Vgs(th)@Id)1.8V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)13nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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