SI4816BDY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4816BDY-T1-E3 is a SI4816BDY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 18.5mΩ@6.8A,10V 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Configuration: Half Bridge
• Continuous Drain Current (Id): 5.8A;8.2A
• Power Dissipation (Pd): 1W;1.25W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 18.5mΩ@6.8A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Type: 2 N-Channel
• Total Gate Charge (Qg@Vgs): 10nC@5V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.