SI4840BDY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4840BDY-T1-E3 is a SI4840BDY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 19A 9mΩ@10V,12.4A 3V@250uA 1PCSNChannel SOIC-8-150mil MOSFETs ROHS. This product comes in a SOIC-8-150mil package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 19A
  • Power Dissipation (Pd): 2.5W;6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@10V,12.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2nF@20V
  • Total Gate Charge (Qg@Vgs): 50nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

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Full Specifications of SI4840BDY-T1-E3

Model NumberSI4840BDY-T1-E3
Model NameVishay Intertech SI4840BDY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description40V 19A 9mΩ@10V,12.4A 3V@250uA 1PCSNChannel SOIC-8-150mil MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8-150mil
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)19A
Power Dissipation (Pd)2.5W;6W
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@10V,12.4A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2nF@20V
Total Gate Charge (Qg@Vgs)50nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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