SI4850BDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4850BDY-T1-GE3 is a SI4850BDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 19.5mΩ@10A,10V 2.8V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 8.4A;11.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 19.5mΩ@10A,10V
  • Power Dissipation (Pd): 2.5W;4.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 790pF@30V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.248 grams.

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Full Specifications of SI4850BDY-T1-GE3

Model NumberSI4850BDY-T1-GE3
Model NameVishay Intertech SI4850BDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 19.5mΩ@10A,10V 2.8V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.248 grams / 0.008748 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)8.4A;11.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)19.5mΩ@10A,10V
Power Dissipation (Pd)2.5W;4.5W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)790pF@30V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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