SI4866BDY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4866BDY-T1-E3 is a SI4866BDY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 21.5A 4.45W 5.3mΩ@4.5V,12A 1V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 21.5A
  • Power Dissipation (Pd): 4.45W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.3mΩ@4.5V,12A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SI4866BDY-T1-E3

Full Specifications of SI4866BDY-T1-E3

Model NumberSI4866BDY-T1-E3
Model NameVishay Intertech SI4866BDY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description12V 21.5A 4.45W 5.3mΩ@4.5V,12A 1V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)21.5A
Power Dissipation (Pd)4.45W
Drain Source On Resistance (RDS(on)@Vgs,Id)5.3mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel

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