SI4890DY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4890DY-T1-E3 is a SI4890DY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 11A 12mΩ@11A,10V 2.5W 800mV@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 11A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@11A,10V
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 20nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SI4890DY-T1-E3

Model NumberSI4890DY-T1-E3
Model NameVishay Intertech SI4890DY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 11A 12mΩ@11A,10V 2.5W 800mV@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@11A,10V
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)20nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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