SI4896DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4896DY-T1-GE3 is a SI4896DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 6.7A 16.5mΩ@10A,10V 1.56W 2V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 6.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16.5mΩ@10A,10V
  • Power Dissipation (Pd): 1.56W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 41nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SI4896DY-T1-GE3

Model NumberSI4896DY-T1-GE3
Model NameVishay Intertech SI4896DY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 6.7A 16.5mΩ@10A,10V 1.56W 2V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)6.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)16.5mΩ@10A,10V
Power Dissipation (Pd)1.56W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)41nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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