SI4909DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4909DY-T1-GE3 is a SI4909DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 8A 27mΩ@10V,8A 3.2W 2.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 8A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@10V,8A
• Power Dissipation (Pd): 3.2W
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 2 P-Channel
• Input Capacitance (Ciss@Vds): 2nF@20V
• Total Gate Charge (Qg@Vgs): 63nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.