SI4922BDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4922BDY-T1-GE3 is a SI4922BDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 8A 16mΩ@5A,10V 3.1W 1.8V@250uA 2 N-Channel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@5A,10V
  • Power Dissipation (Pd): 3.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 2.07nF@15V
  • Total Gate Charge (Qg@Vgs): 62nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.258 grams.

More on SI4922BDY-T1-GE3

Full Specifications of SI4922BDY-T1-GE3

Model NumberSI4922BDY-T1-GE3
Model NameVishay Intertech SI4922BDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 8A 16mΩ@5A,10V 3.1W 1.8V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.258 grams / 0.009101 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)16mΩ@5A,10V
Power Dissipation (Pd)3.1W
Gate Threshold Voltage (Vgs(th)@Id)1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)2.07nF@15V
Total Gate Charge (Qg@Vgs)62nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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