SI4925BDY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4925BDY-T1-E3 is a SI4925BDY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 5.3A 25mΩ@10V,7.1A 1.1W 3V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 5.3A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,7.1A
• Power Dissipation (Pd): 1.1W
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Type: 2 P-Channel
• Total Gate Charge (Qg@Vgs): 50nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.