SI4925DDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4925DDY-T1-GE3 is a SI4925DDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 8A 29mΩ@10V,7.3A 5W 3V@250uA 2 P-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@10V,7.3A
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 1.35nF@15V
  • Total Gate Charge (Qg@Vgs): 50nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.117 grams.

Full Specifications of SI4925DDY-T1-GE3

Model NumberSI4925DDY-T1-GE3
Model NameVishay Intertech SI4925DDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 8A 29mΩ@10V,7.3A 5W 3V@250uA 2 P-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.117 grams / 0.004127 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)29mΩ@10V,7.3A
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)1.35nF@15V
Total Gate Charge (Qg@Vgs)50nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI4925DDY-T1-GE3 With Other 200 Models

Related Models - SI4925DDY-T1-GE3 Alternative

Scroll to Top