SI4931DY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4931DY-T1-GE3 is a SI4931DY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 6.7A 18mΩ@4.5V,8.9A 1.1W 1V@350uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 12V
• Continuous Drain Current (Id): 6.7A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@4.5V,8.9A
• Power Dissipation (Pd): 1.1W
• Gate Threshold Voltage (Vgs(th)@Id): 1V@350uA
• Type: 2 P-Channel
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.