Vishay Intertech SI4936ADY-T1-E3 is a SI4936ADY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4.4A 1.1W 36mΩ@10V,5.9A 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 4.4A
- Power Dissipation (Pd): 1.1W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@10V,5.9A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 2 N-Channel
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.
More on SI4936ADY-T1-E3
Full Specifications of SI4936ADY-T1-E3
Model Number | SI4936ADY-T1-E3 |
Model Name | Vishay Intertech SI4936ADY-T1-E3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 30V 4.4A 1.1W 36mΩ@10V,5.9A 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.245 grams / 0.008642 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 4.4A |
Power Dissipation (Pd) | 1.1W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 36mΩ@10V,5.9A |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Type | 2 N-Channel |
Total Gate Charge (Qg@Vgs) | 20nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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