SI4936BDY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4936BDY-T1-E3 is a SI4936BDY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 6.9A 2.8W 35mΩ@5.9A,10V 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 6.9A
• Power Dissipation (Pd): 2.8W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@5.9A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 530pF@15V
• Total Gate Charge (Qg@Vgs): 15nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.