SI4946BEY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI4946BEY-T1-GE3 is a SI4946BEY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 6.5A 3.7W 41mΩ@10V,5.3A 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 6.5A
• Power Dissipation (Pd): 3.7W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 41mΩ@10V,5.3A
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 840pF@30V
• Total Gate Charge (Qg@Vgs): 25nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.